Discrete Semiconductor Products

NVATS5A114PLZT4G

Obsolete

ON Semiconductor

MOSFET P-CHANNEL 60V 60A ATPAK

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Discrete Semiconductor Products

NVATS5A114PLZT4G

Obsolete

ON Semiconductor

MOSFET P-CHANNEL 60V 60A ATPAK

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NVATS5A114PLZT4G

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	72 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

NVATS5A106PLZ Series

P-Channel Power MOSFET, -40V, -77A, 10.4mΩ

Part	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Qualification	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Grade	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor NVATS5A108PLZT4G	P-Channel	20 V	4.5 V 10 V	-55 °C	175 ░C	79.5 nC	Surface Mount	ATPAK	72 W	AEC-Q101	MOSFET (Metal Oxide)	77 A	2.6 V	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	3850 pF	40 V	10.4 mOhm
ON Semiconductor NVATS5A113PLZT4G	P-Channel	20 V		-55 °C	175 ░C	55 nC	Surface Mount	ATPAK		AEC-Q101	MOSFET (Metal Oxide)	38 A	2.6 V	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	2400 pF	60 V	29.5 mOhm	60 W	4 V	10 V
ON Semiconductor NVATS5A106PLZT4G	P-Channel	20 V	4.5 V 10 V	-55 °C	175 ░C	29 nC	Surface Mount	DPAK/ATPAK		AEC-Q101	MOSFET (Metal Oxide)	33 A	2.6 V	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	1380 pF	40 V	25 mOhm	48 W
ON Semiconductor NVATS5A114PLZT4G	P-Channel	20 V		-55 °C	175 ░C	92 nC	Surface Mount	ATPAK	72 W	AEC-Q101	MOSFET (Metal Oxide)	60 A	2.6 V	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	4000 pF	60 V	16 mOhm		4 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVATS5A106PLZ Series

Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. ATPAK devices are Low on-resistance, High current capability and pin-compatible with DPAK(TO-252). AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources

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