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8-SOIC
Integrated Circuits (ICs)

MIC4421AZM-TR

Active
Microchip Technology

9A LOW SIDE SINGLE INV GATE DRVR, SOIC-8 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES

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8-SOIC
Integrated Circuits (ICs)

MIC4421AZM-TR

Active
Microchip Technology

9A LOW SIDE SINGLE INV GATE DRVR, SOIC-8 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMIC4421AZM-TR
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]9 A
Current - Peak Output (Source, Sink) [custom]9 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET
Input TypeInverting
Logic Voltage - VIL, VIH0.8 V, 3 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]150 °C
Operating Temperature [Min]0 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]20 ns
Rise / Fall Time (Typ) [custom]24 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]18 V
Voltage - Supply [Min]4.5 V

MIC4421A Series

9 A MOSFET Gate Driver

PartGate TypeMounting TypeOperating Temperature [Min]Operating Temperature [Max]Logic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Supplier Device PackageChannel TypeVoltage - Supply [Max]Voltage - Supply [Min]Package / CasePackage / Case [y]Package / Case [x]Input TypeNumber of DriversRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Driven ConfigurationPackage / CasePackage / Case
8-SOIC
Microchip Technology
N-Channel MOSFET
Surface Mount
0 °C
150 °C
0.8 V
3 V
9 A
9 A
8-SOIC
Single
18 V
4.5 V
8-SOIC
3.9 mm
0.154 in
Inverting
1
20 ns
24 ns
Low-Side
8-SOIC
Microchip Technology
IGBT
N-Channel MOSFET
Surface Mount
0 °C
150 °C
9 A
9 A
8-SOIC
Single
18 V
4.5 V
8-SOIC
3.9 mm
0.154 in
Inverting
1
20 ns
24 ns
Low-Side
8-SOIC
Microchip Technology
N-Channel MOSFET
Surface Mount
0 °C
150 °C
0.8 V
3 V
9 A
9 A
8-SOIC
Single
18 V
4.5 V
8-SOIC
3.9 mm
0.154 in
Inverting
1
20 ns
24 ns
Low-Side
TO-220-5
Microchip Technology
IGBT
N-Channel MOSFET
Through Hole
0 °C
150 °C
9 A
9 A
TO-220-5
Single
18 V
4.5 V
TO-220-5
Inverting
1
20 ns
24 ns
Low-Side
8-SOIC
Microchip Technology
N-Channel MOSFET
Surface Mount
0 °C
150 °C
0.8 V
3 V
9 A
9 A
8-SOIC
Single
18 V
4.5 V
8-SOIC
3.9 mm
0.154 in
Inverting
1
20 ns
24 ns
Low-Side
TO-220 / 5
Microchip Technology
N-Channel MOSFET
Through Hole
0 °C
150 °C
0.8 V
3 V
9 A
9 A
TO-220-5
Single
18 V
4.5 V
TO-220-5
Inverting
1
20 ns
24 ns
Low-Side
SOIC / 8
Microchip Technology
IGBT
N-Channel MOSFET
Surface Mount
-40 °C
150 °C
9 A
9 A
8-SOIC
Single
18 V
4.5 V
8-SOIC
3.9 mm
0.154 in
Inverting
1
20 ns
24 ns
Low-Side
PDIP / 8
Microchip Technology
N-Channel MOSFET
Through Hole
-40 °C
150 °C
0.8 V
3 V
9 A
9 A
8-PDIP
Single
18 V
4.5 V
8-DIP
Inverting
1
20 ns
24 ns
Low-Side
0.3 in
7.62 mm
8-SOIC
Microchip Technology
IGBT
N-Channel MOSFET
Surface Mount
-40 °C
150 °C
9 A
9 A
8-SOIC
Single
18 V
4.5 V
8-SOIC
3.9 mm
0.154 in
Inverting
1
20 ns
24 ns
Low-Side
8-SOIC
Microchip Technology
IGBT
N-Channel MOSFET
Surface Mount
-40 °C
150 °C
9 A
9 A
8-SOIC
Single
18 V
4.5 V
8-SOIC
3.9 mm
0.154 in
Inverting
1
20 ns
24 ns
Low-Side

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 1.76
NewarkEach (Supplied on Full Reel) 100$ 1.82

Description

General part information

MIC4421A Series

MIC4421A and MIC4422A MOSFET gate drivers are rugged, efficient, and easy to use. The MIC4421A is an inverting driver, while the MIC4422A is a non-inverting driver. Both versions are capable of 9 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421A/4422A accepts any logic input from 2.4V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4421A/4422A gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS helps ensure adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.

Documents

Technical documentation and resources