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TO-220-5
Integrated Circuits (ICs)

MIC4421ZT

Active
Microchip Technology

BUFFER/INVERTER BASED MOSFET DRIVER, 9A, BCDMOS, PSFM5, LEAD FREE, TO-220, 5 PIN

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TO-220-5
Integrated Circuits (ICs)

MIC4421ZT

Active
Microchip Technology

BUFFER/INVERTER BASED MOSFET DRIVER, 9A, BCDMOS, PSFM5, LEAD FREE, TO-220, 5 PIN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMIC4421ZT
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]9 A
Current - Peak Output (Source, Sink) [custom]9 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET, IGBT
Input TypeInverting
Mounting TypeThrough Hole
Number of Drivers1
Operating Temperature [Max]150 °C
Operating Temperature [Min]0 °C
Package / CaseTO-220-5
Rise / Fall Time (Typ) [custom]20 ns
Rise / Fall Time (Typ) [custom]24 ns
Supplier Device PackageTO-220-5
Voltage - Supply [Max]18 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.95
25$ 3.28
100$ 2.99
Microchip DirectTUBE 1$ 3.95
25$ 3.28
100$ 2.99
1000$ 2.48
5000$ 2.29
10000$ 2.14
NewarkEach 100$ 3.08

Description

General part information

MIC4421A Series

MIC4421A and MIC4422A MOSFET gate drivers are rugged, efficient, and easy to use. The MIC4421A is an inverting driver, while the MIC4422A is a non-inverting driver. Both versions are capable of 9 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421A/4422A accepts any logic input from 2.4V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4421A/4422A gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS helps ensure adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.