Discrete Semiconductor Products

JAN2N3019

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Microchip Technology

TRANS GP BJT NPN 80V 1A 800MW 3-PIN TO-5AA TRAY

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Documents2N3019 Product Change Notice EN

Discrete Semiconductor Products

JAN2N3019

Active

Microchip Technology

TRANS GP BJT NPN 80V 1A 800MW 3-PIN TO-5AA TRAY

Deep-Dive with AI

Documents2N3019 Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N3019

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	800 mW
Qualification	MIL-PRF-19500/391
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

JANTXV2N3019S-Transistor Series

MIL-PRF-19500/391

Part	Grade	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Qualification	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Microchip Technology JANTXV2N3019S	Military	TO-39	50 hFE	Through Hole	10 µA	1 A	800 mW	500 mV	TO-205AD TO-39-3 Metal Can	MIL-PRF-19500/391	NPN	80 V
Microchip Technology JANTX2N3019S	Military	TO-39	50 hFE	Through Hole	10 µA	1 A	800 mW	500 mV	TO-205AD TO-39-3 Metal Can	MIL-PRF-19500/391	NPN	80 V
Microchip Technology 2N3019		TO-5	50 hFE	Through Hole	10 µA	1 A	800 mW	500 mV	TO-205AA TO-5-3 Metal Can		NPN	80 V
Microchip Technology JAN2N3019	Military	TO-39	50 hFE	Through Hole	10 µA	1 A	800 mW	500 mV	TO-205AD TO-39-3 Metal Can	MIL-PRF-19500/391	NPN	80 V
Microchip Technology JANSR2N3019	Military	TO-5AA	50 hFE	Through Hole	10 µA	1 A	800 mW	500 mV	TO-205AA TO-5-3 Metal Can	MIL-PRF-19500/391	NPN	80 V
Microchip Technology JANSR2N3019S	Military	TO-39 (TO-205AD)	50 hFE	Through Hole	10 µA	1 A	800 mW	500 mV	TO-205AD TO-39-3 Metal Can	MIL-PRF-19500/391	NPN	80 V
Microchip Technology JANS2N3019S	Military	TO-39 (TO-205AD)	50 hFE	Through Hole	10 µA	1 A	800 mW	500 mV	TO-205AD TO-39-3 Metal Can	MIL-PRF-19500/391	NPN	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 8.52
Microchip Direct	N/A	1	$ 9.17
Newark	Each	100	$ 8.52
		500	$ 8.19

Description

General part information

JANTXV2N3019S-Transistor Series

This 2N3019 silicon NPN transistor device is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-205AA (TO-5) Long Lead package as well as a TO-205AD (TO-39) package, when S suffix is added. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

Documents

Technical documentation and resources

2N3019

Data Sheets

Product Change Notice EN

Datasheet