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Technical Specifications
Parameters and characteristics for this part
| Specification | JANS2N3019S |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 800 mW |
| Qualification | MIL-PRF-19500/391 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50 | $ 100.16 | |
Description
General part information
JANTXV2N3019S-Transistor Series
This 2N3019 silicon NPN transistor device is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-205AA (TO-5) Long Lead package as well as a TO-205AD (TO-39) package, when S suffix is added. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
Documents
Technical documentation and resources
No documents available