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SSM3J352F - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.0 A, 0.11 Ω@10V, SOT-346(S-Mini)

Discrete Semiconductor Products

SSM3J168F,LF

Active

Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -60 V, -0.4 A, 1.55 Ω@10V, SOT-346(S-MINI)

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Search across all available documentation for this part.

DocumentsSSM3J168F Data sheet/English Mini catalog Introduction of Semi-power & small-size low RON MOSFET +5

SSM3J352F - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.0 A, 0.11 Ω@10V, SOT-346(S-Mini)

Discrete Semiconductor Products

SSM3J168F,LF

Active

Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -60 V, -0.4 A, 1.55 Ω@10V, SOT-346(S-MINI)

Deep-Dive with AI

DocumentsSSM3J168F Data sheet/English Mini catalog Introduction of Semi-power & small-size low RON MOSFET +5

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J168F,LF

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Input Capacitance (Ciss) (Max) @ Vds	82 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	1.9 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-16 V
Vgs(th) (Max) @ Id	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.49
		10	$ 0.30
		100	$ 0.19
		500	$ 0.14
		1000	$ 0.13
	Digi-Reel®	1	$ 0.49
		10	$ 0.30
		100	$ 0.19
		500	$ 0.14
		1000	$ 0.13
	N/A	12779	$ 0.44
	Tape & Reel (TR)	3000	$ 0.11
		6000	$ 0.10
		9000	$ 0.09
		15000	$ 0.09
		21000	$ 0.08
		30000	$ 0.08
		75000	$ 0.08

Description

General part information

SSM3J168F Series

P-Channel 60 V 400mA (Ta) 1.2W (Ta) Surface Mount SOT-23-3

Documents

Technical documentation and resources

SSM3J168F Data sheet/English

Mini catalog Introduction of Semi-power & small-size low RON MOSFET

Mini catalog Introduction of small-package MOSFET

Selection Guide Small Signal 2025 Rev1.0

SSM3J168F Data sheet/Japanese

Surface Mount Small Signal MOSFET Precautions for use

Application Note

Selection Guide MOSFETs 2025 Rev1.0

SSM3J168F Series

Part	Operating Temperature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3J168F,LXHF	150 °C	2 V	1.55 Ohm	MOSFET (Metal Oxide)	3 nC	S-Mini	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V	Automotive	82 pF	4 V	10 V	P-Channel	400 mA	600 mW	10 V	-20 V	AEC-Q101
Toshiba Semiconductor and Storage SSM3J168F,LF	150 °C	2 V		MOSFET (Metal Oxide)	3 nC	SOT-23-3	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V		82 pF	4 V	10 V	P-Channel	400 mA		20 V	-16 V		1.2 W	1.9 Ohm