Specification	SSM3J168F,LXHF

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	82 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	600 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	1.55 Ohm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

SSM3J168F Series

Part	Operating Temperature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3J168F,LXHF	150 °C	2 V	1.55 Ohm	MOSFET (Metal Oxide)	3 nC	S-Mini	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V	Automotive	82 pF	4 V	10 V	P-Channel	400 mA	600 mW	10 V	-20 V	AEC-Q101
Toshiba Semiconductor and Storage SSM3J168F,LF	150 °C	2 V		MOSFET (Metal Oxide)	3 nC	SOT-23-3	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V		82 pF	4 V	10 V	P-Channel	400 mA		20 V	-16 V		1.2 W	1.9 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 400mA (Ta) 600mW (Ta) Surface Mount S-Mini

Technical documentation and resources