SSM3J168F Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -60 V, -0.4 A, 1.55 Ω@10V, SOT-346(S-MINI)

Part	Operating Temperature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3J168F,LXHF	150 °C	2 V	1.55 Ohm	MOSFET (Metal Oxide)	3 nC	S-Mini	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V	Automotive	82 pF	4 V	10 V	P-Channel	400 mA	600 mW	10 V	-20 V	AEC-Q101
Toshiba Semiconductor and Storage SSM3J168F,LF	150 °C	2 V		MOSFET (Metal Oxide)	3 nC	SOT-23-3	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V		82 pF	4 V	10 V	P-Channel	400 mA		20 V	-16 V		1.2 W	1.9 Ohm