Specification	APT10M25BVRG

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	225 nC
Input Capacitance (Ciss) (Max) @ Vds	5160 pF
Mounting Type	Through Hole
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)

APT10M11JVRU3-Module Series

100V/Buck chopper/Si Mosfet modules

Part	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Microchip Technology APT10M19SVRG	Surface Mount	19 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	6120 pF	75 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK
Microchip Technology APT10M19BVRG	Through Hole	19 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	6120 pF	75 A	TO-247-3	TO-247 [B]
Microchip Technology APT10M09LVFRG	Through Hole	9 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)		9875 pF	100 A	TO-264-3 TO-264AA	TO-264 [L]	4 V	350 nC
Microchip Technology APT10M11JVFR	Chassis Mount		100 V	N-Channel	MOSFET (Metal Oxide)		10380 pF	144 A	SOT-227-4 miniBLOC	ISOTOP®	4 V	450 nC	11 mOhm
Microchip Technology APT10M19SVFRG	Surface Mount	19 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	6120 pF	75 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK
Microchip Technology APT10M11JVRU3	Chassis Mount		100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	8600 pF	142 A	SOT-227-4 miniBLOC	SOT-227	4 V		11 mOhm	10 V	450 W	-55 °C	150 °C	30 V
Microchip Technology APT10M25BVRG	Through Hole		100 V	N-Channel	MOSFET (Metal Oxide)	225 nC	5160 pF	75 A	TO-247-3	TO-247 [B]			25 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOS V® can still provide the best trade-off between performance and

cost in some applications. Power MOS V® utilizes a low resistance aluminum

metal gate structure. This allows for faster gate signal propagation than is

Technical documentation and resources