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EVAL-ADUM4121-1EBZ
Development Boards, Kits, Programmers

EVAL-ADUM4121-1EBZ

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Analog Devices

EVAL BOARD FOR ADUM4121

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EVAL-ADUM4121-1EBZ
Development Boards, Kits, Programmers

EVAL-ADUM4121-1EBZ

Active
Analog Devices

EVAL BOARD FOR ADUM4121

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationEVAL-ADUM4121-1EBZ
ContentsBoard(s)
FunctionGate Driver
Supplied ContentsBoard(s)
TypePower Management
Utilized IC / PartADuM4121-1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 70.17

Description

General part information

ADuM4121-1 Series

The ADuM4121/ADuM4121-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc.’siCoupler®technology to provide precision isolation. The ADuM4121/ADuM4121-1 provide 5 kV rms isolation in the wide-body, 8-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers.The ADuM4121/ADuM4121-1 operate with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM4121/ ADuM4121-1 offer the benefit of true, galvanic isolation between the input and the output.The ADuM4121/ADuM4121-1 include an internal Miller clamp that activates at 2 V on the falling edge of the gate drive output, supplying the driven gate with a lower impedance path to reduce the chance of Miller capacitance induced turn on.Options exists to allow the thermal shutdown to be enabled or disabled. As a result, the ADuM4121/ADuM4121-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal oxide semiconductor field, effect transistor (MOSFET) configurations over a wide range of switching voltages.ApplicationsSwitching power suppliesIsolated IGBT/MOSFET gate drivesIndustrial invertersGallium nitride (GaN)/silicon carbide (SiC) power devices

Documents

Technical documentation and resources