ADuM4121-1 Series

High Voltage, Isolated Gate Driver with Internal Miller Clamp, 2 A Output with Thermal Shutdown

Catalog

High Voltage, Isolated Gate Driver with Internal Miller Clamp, 2 A Output with Thermal Shutdown

Part	Common Mode Transient Immunity (Min) [Min]	Pulse Width Distortion (Max) [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]	Voltage - Output Supply [Min]	Voltage - Output Supply [Max]	Number of Channels	Approval Agency	Supplier Device Package	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Mounting Type	Current - Peak Output	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Utilized IC / Part	Type	Supplied Contents	Function	Contents
Analog Devices ADUM4121CRIZ	150 kV/µs	13 ns	8-SOIC	0.295 in	7.5 mm	11.6 V	35 V	1	CSA UR VDE	8-SOIC-IC	53 ns	42 ns	Surface Mount	2.3 A	Magnetic Coupling	125 °C	-40 °C
Analog Devices EVAL-ADUM4121-1EBZ																		ADuM4121-1	Power Management	Board(s)	Gate Driver	Board(s)
Analog Devices ADUM4121-1ARIZ	150 kV/µs	13 ns	8-SOIC	0.295 in	7.5 mm	4.5 V	35 V	1	CSA UR VDE	8-SOIC-IC	53 ns	42 ns	Surface Mount	2.3 A	Magnetic Coupling	125 °C	-40 °C
Analog Devices EVAL-ADUM4121EBZ																		ADuM4121	Power Management	Board(s)	Gate Driver	Board(s)
Analog Devices ADUM4121BRIZ	150 kV/µs	13 ns	8-SOIC	0.295 in	7.5 mm	7.5 V	35 V	1	CSA UR VDE	8-SOIC-IC	53 ns	42 ns	Surface Mount	2.3 A	Magnetic Coupling	125 °C	-40 °C

Catalog

High Voltage, Isolated Gate Driver with Internal Miller Clamp, 2 A Output with Thermal Shutdown

Key Features

• 2 A peak output current (<2 Ω RDSON)

• 2.5 V to 6.5 V input

• 4.5 V to 35 V output

• Undervoltage lockout (UVLO) at 2.5 V VDD1

• Multiple UVLO options on VDD2Grade A: 4.4 V (typical) UVLO on VDD2Grade B: 7.3 V (typical) UVLO on VDD2Grade C: 11.3 V (typical) UVLO on VDD2

• Grade A: 4.4 V (typical) UVLO on VDD2

• Grade B: 7.3 V (typical) UVLO on VDD2

• Grade C: 11.3 V (typical) UVLO on VDD2

• Precise timing characteristics53 ns maximum isolator and driver propagation delay

• 53 ns maximum isolator and driver propagation delay

• Safety and regulatory approvals (pending)UL recognition per UL 15775 kV rms for 1 minute SOIC long package

• UL recognition per UL 1577

• 5 kV rms for 1 minute SOIC long package

• CSA Component Acceptance Notice 5A

• VDE certificate of conformity (pending)DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12VIORM= 849 V peak

• DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12

• VIORM= 849 V peak

• Wide body, 8-lead SOIC

• CMOS input logic levels

• High common-mode transient immunity: >150 kV/µs

• High junction temperature operation: 125°C

• Default low output

• Internal Miller clamp

• DownloadADuM4121-1-EP data sheet(pdf)

• Military temperature range: −55°C to +125°C

• Undervoltage lockout (UVLO) at 7.5 V VDD2

• Controlled manufacturing baseline

• 1 assembly/test site

• 1 fabrication site

• Product change notification

• Qualification data available on request

• V62/19601-01XE DSCC Drawing Number

Description

The ADuM4121/ADuM4121-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc.’siCoupler®technology to provide precision isolation. The ADuM4121/ADuM4121-1 provide 5 kV rms isolation in the wide-body, 8-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers.The ADuM4121/ADuM4121-1 operate with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM4121/ ADuM4121-1 offer the benefit of true, galvanic isolation between the input and the output.The ADuM4121/ADuM4121-1 include an internal Miller clamp that activates at 2 V on the falling edge of the gate drive output, supplying the driven gate with a lower impedance path to reduce the chance of Miller capacitance induced turn on.Options exists to allow the thermal shutdown to be enabled or disabled. As a result, the ADuM4121/ADuM4121-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal oxide semiconductor field, effect transistor (MOSFET) configurations over a wide range of switching voltages.ApplicationsSwitching power suppliesIsolated IGBT/MOSFET gate drivesIndustrial invertersGallium nitride (GaN)/silicon carbide (SiC) power devices