Integrated Circuits (ICs)

DRV8300DIPWR

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Texas Instruments

TRIPLE HALF BRIDGE MOTOR DRIVER 20-PIN TSSOP T/R

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Integrated Circuits (ICs)

DRV8300DIPWR

Active

Texas Instruments

TRIPLE HALF BRIDGE MOTOR DRIVER 20-PIN TSSOP T/R

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DRV8300DIPWR

Channel Type	3-Phase
Current - Peak Output (Source, Sink) [custom]	1.5 A
Current - Peak Output (Source, Sink) [custom]	750 mA
Driven Configuration	High-Side and Low-Side
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	105 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	0.8 V, 2 V
Mounting Type	Surface Mount
Number of Drivers	3
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	20-TSSOP
Package / Case [x]	0.173 in
Package / Case [y]	4.4 mm
Rise / Fall Time (Typ)	12 ns
Rise / Fall Time (Typ)	12 ns
Supplier Device Package	20-TSSOP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	5 V

DRV8300-Q1 Series

Automotive 100-V max simple 3-phase gate driver with bootstrap diodes

Part	Package / Case [y]	Package / Case	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Channel Type	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Input Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Logic Voltage - VIL, VIH	Gate Type	Grade	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Qualification
Texas Instruments DRV8300NIPWR	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET
Texas Instruments DRV8300DRGER		24-VFQFN Exposed Pad		1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	24-VQFN (4x4)	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET
Texas Instruments DRV8300DIPWR	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET
Texas Instruments DRV8300NPWR	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	MOSFET (N-Channel)
Texas Instruments DRV8300DPWRQ1	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase			Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3		N-Channel MOSFET	Automotive	24 ns	12 ns	AEC-Q100
Texas Instruments DRV8300NRGER		24-VFQFN Exposed Pad		1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	24-VQFN (4x4)	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	3000	$ 0.38
Digikey	Cut Tape (CT)	1	$ 1.70
		10	$ 1.53
		25	$ 1.44
		100	$ 1.23
		250	$ 1.16
		500	$ 1.01
		1000	$ 0.84
	Digi-Reel®	1	$ 1.70
		10	$ 1.53
		25	$ 1.44
		100	$ 1.23
		250	$ 1.16
		500	$ 1.01
		1000	$ 0.84
	Tape & Reel (TR)	3000	$ 0.35

Description

General part information

DRV8300-Q1 Series

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

Documents

Technical documentation and resources