DRV8300NIPWR
Active100-V MAX SIMPLE 3-PHASE GATE DRIVER WITH BOOTSTRAP DIODES
Deep-Dive with AI
Search across all available documentation for this part.
DRV8300NIPWR
Active100-V MAX SIMPLE 3-PHASE GATE DRIVER WITH BOOTSTRAP DIODES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DRV8300NIPWR |
|---|---|
| Channel Type | 3-Phase |
| Current - Peak Output (Source, Sink) [custom] | 1.5 A |
| Current - Peak Output (Source, Sink) [custom] | 750 mA |
| Driven Configuration | High-Side and Low-Side |
| Gate Type | N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) [Max] | 105 V |
| Input Type | Non-Inverting, Inverting |
| Logic Voltage - VIL, VIH | 0.8 V, 2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 3 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 20-TSSOP |
| Package / Case [x] | 0.173 in |
| Package / Case [y] | 4.4 mm |
| Rise / Fall Time (Typ) | 12 ns |
| Rise / Fall Time (Typ) | 12 ns |
| Supplier Device Package | 20-TSSOP |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.70 | |
| 10 | $ 1.53 | |||
| 25 | $ 1.44 | |||
| 100 | $ 1.23 | |||
| 250 | $ 1.16 | |||
| 500 | $ 1.01 | |||
| 1000 | $ 0.84 | |||
| Digi-Reel® | 1 | $ 1.70 | ||
| 10 | $ 1.53 | |||
| 25 | $ 1.44 | |||
| 100 | $ 1.23 | |||
| 250 | $ 1.16 | |||
| 500 | $ 1.01 | |||
| 1000 | $ 0.84 | |||
| Tape & Reel (TR) | 3000 | $ 0.31 | ||
| Texas Instruments | LARGE T&R | 1 | $ 0.65 | |
| 100 | $ 0.50 | |||
| 250 | $ 0.37 | |||
| 1000 | $ 0.26 | |||
Description
General part information
DRV8300-Q1 Series
DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.
The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.
Documents
Technical documentation and resources
