Discrete Semiconductor Products
SCT3017ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 118 A, 650 V, 0.017 OHM, TO-247N
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
SCT3017ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 118 A, 650 V, 0.017 OHM, TO-247N
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3017ALGC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 118 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2884 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 427 W |
| Rds On (Max) @ Id, Vgs | 22.1 mOhm |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3017 Series
AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources
