16:[["$","meta","0",{"name":"viewport","content":"width=device-width, initial-scale=1"}],["$","meta","1",{"charSet":"utf-8"}],["$","title","2",{"children":"θ_JC and Ψ_JT | SCT3017ALGC11 - Rohm Semiconductor | Zenode.ai"}],["$","meta","3",{"name":"description","content":"Browse datasheets and documents for SCT3017ALGC11 - Rohm Semiconductor. Key specs: Rds On (Max) @ Id, Vgs 22.1 mOhm mOhm, Gate Charge (Qg) (Max) @ Vgs 172 nC nC, Operating Temperature 175 °C °C, FET Type N-Channel, Mounting Type Through Hole, Power Dissipation (Max) 427 W W. Series: SCT3017. Manufac"}],["$","meta","4",{"name":"keywords","content":"SCT3017ALGC11, Rohm Semiconductor, Series SCT3017, Single FETs, MOSFETs, FETs, MOSFETs, Transistors, Discrete Semiconductor Products, Rds On (Max) @ Id, Vgs, Gate Charge (Qg) (Max) @ Vgs, Operating Temperature, FET Type, Mounting Type, Power Dissipation (Max), Supplier Device Package, Drain to Source Voltage (Vdss), Input Capacitance (Ciss) (Max) @ Vds, Package / Case, Drive Voltage (Max Rds On, Min Rds On), Vgs(th) (Max) @ Id, datasheet, specifications, pricing, electronic components"}],["$","meta","5",{"name":"robots","content":"index, follow"}],["$","meta","6",{"name":"googlebot","content":"index, follow, max-image-preview:large, max-snippet:-1"}],["$","meta","7",{"name":"product:mpn","content":"SCT3017ALGC11"}],["$","meta","8",{"name":"product:brand","content":"Rohm Semiconductor"}],["$","meta","9",{"name":"product:category","content":"Single FETs, MOSFETs, FETs, MOSFETs, Transistors, Discrete Semiconductor Products"}],["$","meta","10",{"name":"application/ld+json","content":"$1b"}],["$","meta","11",{"name":"product:series","content":"SCT3017"}],["$","meta","12",{"property":"og:title","content":"θ_JC and Ψ_JT | SCT3017ALGC11 - Rohm Semiconductor | Zenode.ai"}],["$","meta","13",{"property":"og:description","content":"Browse datasheets and documents for SCT3017ALGC11 - Rohm Semiconductor. Key specs: Rds On (Max) @ Id, Vgs 22.1 mOhm mOhm, Gate Charge (Qg) (Max) @ Vgs 172 nC nC, Operating Temperature 175 °C °C, FET Type N-Channel, Mounting Type Through Hole, Power Dissipation (Max) 427 W W. Series: SCT3017. Manufac"}],["$","meta","14",{"property":"og:site_name","content":"Zenode.ai"}],["$","meta","15",{"property":"og:locale","content":"en_US"}],["$","meta","16",{"property":"og:image","content":"https://cdn.zenode.ai/blobs/documents/24e72f813e69881e5bb37ca246c46d5932aaed1913e785676b0e664a893b97f0.webp"}],["$","meta","17",{"property":"og:image:width","content":"1200"}],["$","meta","18",{"property":"og:image:height","content":"630"}],["$","meta","19",{"property":"og:image:alt","content":"SCT3017ALGC11 - Rohm Semiconductor"}],["$","meta","20",{"property":"og:image:type","content":"image/webp"}],["$","meta","21",{"property":"og:type","content":"website"}],["$","meta","22",{"name":"twitter:card","content":"summary_large_image"}],["$","meta","23",{"name":"twitter:site","content":"@zenode"}],["$","meta","24",{"name":"twitter:creator","content":"@zenode"}],["$","meta","25",{"name":"twitter:title","content":"θ_JC and Ψ_JT | SCT3017ALGC11 - Rohm Semiconductor"}],["$","meta","26",{"name":"twitter:description","content":"Browse datasheets and documents for SCT3017ALGC11 - Rohm Semiconductor. Key specs: Rds On (Max) @ Id, Vgs 22.1 mOhm mOhm, Gate Charge (Qg) (Max) @ Vgs 172 nC nC, Operating Temperature 175 °C °C, FET Type N-Channel, Mounting Type Through Hole, Power Dissipation (Max) 427 W W. Series: SCT3017. Manufac"}],["$","meta","27",{"name":"twitter:image","content":"https://cdn.zenode.ai/blobs/documents/24e72f813e69881e5bb37ca246c46d5932aaed1913e785676b0e664a893b97f0.webp"}],["$","meta","28",{"name":"twitter:image:alt","content":"SCT3017ALGC11 - Rohm Semiconductor"}],["$","link","29",{"rel":"icon","href":"/favicon/favicon.ico"}],["$","meta","30",{"name":"next-size-adjust"}]]