Zenode.ai Logo
Beta
STGYA75H120DF2
Discrete Semiconductor Products

STGYA75H120DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 1200 V, 75 A, HIGH-SPEED H SERIES IGBT IN A MAX247 LONG LEADS PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

STGYA75H120DF2
Discrete Semiconductor Products

STGYA75H120DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 1200 V, 75 A, HIGH-SPEED H SERIES IGBT IN A MAX247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGYA75H120DF2
Current - Collector (Ic) (Max) [Max]150 A
Current - Collector Pulsed (Icm)300 A
Gate Charge313 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]750 W
Reverse Recovery Time (trr)356 ns
Supplier Device PackageTO-247
Switching Energy3.9 mJ, 4.3 mJ
Td (on/off) @ 25°C [custom]366 ns
Td (on/off) @ 25°C [custom]61 ns
Vce(on) (Max) @ Vge, Ic2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 62$ 9.01
NewarkEach 1$ 10.83
10$ 9.63
25$ 8.87
60$ 8.11
120$ 7.68
270$ 7.25

Description

General part information

STGYA75H120DF2 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.