STGYA75H120DF2 Series

Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

Catalog

Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

Part	Gate Charge	Power - Max [Max]	Switching Energy	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Mounting Type	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Package / Case	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
STMicroelectronics STGYA75H120DF2	313 nC	750 W	3.9 mJ 4.3 mJ	150 A	TO-247	1200 V	300 A	Through Hole	356 ns	2.6 V	175 °C	-55 °C	Trench Field Stop	TO-247-3	366 ns	61 ns

Catalog

Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.