STU2NK100Z
ActiveN-CHANNEL 1000 V, 6.25 OHM TYP., 1.85 A SUPERMESH POWER MOSFET IN AN IPAK PACKAGE
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STU2NK100Z
ActiveN-CHANNEL 1000 V, 6.25 OHM TYP., 1.85 A SUPERMESH POWER MOSFET IN AN IPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STU2NK100Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.85 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 499 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 8.5 Ohm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3011 | $ 2.03 | |
Description
General part information
STU2NK100Z Series
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources