STU2NK100Z Series

N-channel 1000 V, 6.25 Ohm typ., 1.85 A SuperMESH Power MOSFET in an IPAK package

Catalog

N-channel 1000 V, 6.25 Ohm typ., 1.85 A SuperMESH Power MOSFET in an IPAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STU2NK100Z	10 V	IPAK TO-251-3 Short Leads TO-251AA	150 °C	-55 °C	MOSFET (Metal Oxide)	8.5 Ohm	4.5 V	70 W	1000 V	IPAK	N-Channel	30 V	16 nC	Through Hole	499 pF	1.85 A

Catalog

N-channel 1000 V, 6.25 Ohm typ., 1.85 A SuperMESH Power MOSFET in an IPAK package

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.