Discrete Semiconductor Products

SI7120DN-T1-GE3

Obsolete

MOSFET N-CH 60V 6.3A 1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 6.3A 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7120DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6.3 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Package / Case	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI7120DN-T1-E3	60 V	6.3 A	45 nC	MOSFET (Metal Oxide)	PowerPAK® 1212-8	PowerPAK® 1212-8	N-Channel	Surface Mount	19 mOhm	3.5 V
Vishay General Semiconductor - Diodes Division SI7120ADN-T1-GE3	60 V	6 A	45 nC	MOSFET (Metal Oxide)	PowerPAK® 1212-8	PowerPAK® 1212-8	N-Channel	Surface Mount		3 V	21 mOhm	20 V	4.5 V 10 V	-55 °C	150 °C	1.5 W
Vishay General Semiconductor - Diodes Division SI7120DN-T1-GE3	60 V	6.3 A	45 nC	MOSFET (Metal Oxide)	PowerPAK® 1212-8	PowerPAK® 1212-8	N-Channel	Surface Mount	19 mOhm	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 6.3A (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available