Discrete Semiconductor Products

SI7120ADN-T1-GE3

LTB

MOSFET N-CH 60V 6A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 6A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7120ADN-T1-GE3

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	45 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Technology	Rds On (Max)	FET Type	Mounting Type	Package / Case	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI7120DN-T1-E3	60 V	6.3 A	MOSFET (Metal Oxide)	19 mOhm	N-Channel	Surface Mount	PowerPAK® 1212-8	3.5 V	PowerPAK® 1212-8	45 nC
Vishay Dale SI7120ADN-T1-GE3	60 V	6 A	MOSFET (Metal Oxide)	21 mOhm	N-Channel	Surface Mount	PowerPAK® 1212-8	3 V	PowerPAK® 1212-8	45 nC	20 V	1.5 W	10 V	4.5 V	-55 °C	150 °C
Vishay Dale SI7120DN-T1-GE3	60 V	6.3 A	MOSFET (Metal Oxide)	19 mOhm	N-Channel	Surface Mount	PowerPAK® 1212-8	3.5 V	PowerPAK® 1212-8	45 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 60 V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources