SI7120 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 6.3A 1212-8
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Supplier Device Package | Package / Case | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 60 V | 6.3 A | 45 nC | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | PowerPAK® 1212-8 | N-Channel | Surface Mount | 19 mOhm | 3.5 V | ||||||
Vishay General Semiconductor - Diodes Division | 60 V | 6 A | 45 nC | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | PowerPAK® 1212-8 | N-Channel | Surface Mount | 3 V | 21 mOhm | 20 V | 4.5 V 10 V | -55 °C | 150 °C | 1.5 W | |
Vishay General Semiconductor - Diodes Division | 60 V | 6.3 A | 45 nC | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | PowerPAK® 1212-8 | N-Channel | Surface Mount | 19 mOhm | 3.5 V |