Discrete Semiconductor Products

STL4P2UH7

Obsolete

MOSFET P-CH 20V 4A POWERFLAT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4A POWERFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	STL4P2UH7

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-PowerWDFN
Power Dissipation (Max)	2.4 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	PowerFlat™ (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max) [Max]
STMicroelectronics STL4LN80K5	N-Channel	30 V	5 V	110 pF	800 V	10 V	3 A	8-PowerVDFN	MOSFET (Metal Oxide)	38 W	2.6 Ohm	PowerFlat™ (5x6) VHV	4 nC	150 °C	-55 °C	Surface Mount
STMicroelectronics STL4P2UH7	P-Channel		1 V	510 pF	20 V		4 A	6-PowerWDFN	MOSFET (Metal Oxide)	2.4 W	100 mOhm	PowerFlat™ (2x2)	4.8 nC			Surface Mount	150 °C	1.8 V	4.5 V	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.16

General part information

P-Channel 20 V 4A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)

Technical documentation and resources