Discrete Semiconductor Products

FDZ191P_P

Obsolete

ON Semiconductor

MOSFET P-CH 20V 3A 6WLCSP

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Discrete Semiconductor Products

FDZ191P_P

Obsolete

ON Semiconductor

MOSFET P-CH 20V 3A 6WLCSP

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDZ191P_P

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA, WLCSP
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	6-WLCSP (1x1.5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDZ197PZ Series

P-Channel 1.5V Specified PowerTrench<sup>®</sup> Thin WL-CSP MOSFET -20V, -3.8A, 64mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Mounting Type	Supplier Device Package	FET Type	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDZ197PZ	25 nC	8 V	20 V	1.5 V 4.5 V	3.8 A	1570 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1 V
ON Semiconductor FDZ193P		12 V	20 V	1.7 V 4.5 V	3 A	660 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1.5 V	90 mOhm	10 nC
ON Semiconductor FDZ197PZ	25 nC	8 V	20 V	1.5 V 4.5 V	3.8 A	1570 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1.0x1.5)	P-Channel	MOSFET (Metal Oxide)	1 V
ON Semiconductor FDZ191P_P		8 V	20 V	1.5 V 4.5 V	3 A	800 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1.5 V		13 nC	85 mOhm
ON Semiconductor FDZ192NZ	17 nC		20 V		5.3 A	1220 pF	-55 °C	150 °C	6-UFBGA WLCSP		Surface Mount	6-WLCSP (1x1.5)	N-Channel	MOSFET (Metal Oxide)	1 V			39 mOhm
ON Semiconductor FDZ193P		12 V	20 V	1.7 V 4.5 V	3 A	660 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1.5 V	90 mOhm	10 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDZ197PZ Series

Designed on an advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

Documents

Technical documentation and resources

No documents available