Discrete Semiconductor Products
STH80N10LF7-2AG
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.008 OHM TYP., 80 A STRIPFET F7 POWER MOSFET IN H2PAK-2 PACKAGE
Discrete Semiconductor Products
STH80N10LF7-2AG
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.008 OHM TYP., 80 A STRIPFET F7 POWER MOSFET IN H2PAK-2 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STH80N10LF7-2AG |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28.3 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 110 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.97 | |
Description
General part information
STH80N10LF7-2AG Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources