STH80N10LF7-2AG Series

N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

Catalog

N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Power Dissipation (Max)	Mounting Type	FET Type	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STH80N10LF7-2AG	28.3 nC	H2Pak-2	Automotive	175 °C	-55 °C	MOSFET (Metal Oxide)	110 W	Surface Mount	N-Channel	AEC-Q101	4.5 V 10 V	100 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 mOhm	2900 pF

Catalog

N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.