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TO-247 / 2
Discrete Semiconductor Products

MSC050SDA120B

Active
Microchip Technology

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 109A, 1200V V(RRM), SILICON CARBIDE, TO-247

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TO-247 / 2
Discrete Semiconductor Products

MSC050SDA120B

Active
Microchip Technology

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 109A, 1200V V(RRM), SILICON CARBIDE, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationMSC050SDA120B
Capacitance @ Vr, F246 pF
Current - Reverse Leakage @ Vr200 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-247-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-247-3
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 16.92
25$ 15.60
100$ 13.77
Microchip DirectTUBE 1$ 16.92
10$ 15.60
100$ 13.58
500$ 12.67
NewarkEach 10$ 15.60
100$ 13.58
500$ 12.67

Description

General part information

MSC050SDA120 Series

MSC050SDA070 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.