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TO-247
Discrete Semiconductor Products

MSC050SDA170B

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Microchip Technology

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.7 KV, 50 A, 410 NC, TO-247

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TO-247
Discrete Semiconductor Products

MSC050SDA170B

Active
Microchip Technology

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.7 KV, 50 A, 410 NC, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationMSC050SDA170B
Capacitance @ Vr, F4450 pF
Current - Average Rectified (Io)136 A
Current - Reverse Leakage @ Vr200 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-247-2
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-247
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1700 V
Voltage - Forward (Vf) (Max) @ If1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 42.60
25$ 39.28
100$ 34.18
Microchip DirectTUBE 1$ 42.60
10$ 39.28
100$ 34.18
500$ 31.89
NewarkEach 1$ 44.30
5$ 43.15
10$ 42.01
25$ 40.85
50$ 38.20
100$ 35.55

Description

General part information

MSC050SDA120 Series

MSC050SDA070 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.