UPA2450CTL-E1-A

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2450CTL-E1-A

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	564 pF
Mounting Type	Surface Mount
Package / Case	6-VFDFN Exposed Pad
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	6-HWSON
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Vgs(th) (Max) @ Id	Configuration	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Power - Max [Max]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation UPA2450CTL-E1-A	1.5 V	2 N-Channel (Dual)	6-VFDFN Exposed Pad	6-HWSON	17.5 mOhm	8.6 A	Surface Mount	MOSFET (Metal Oxide)	700 mW	Logic Level Gate	564 pF	20 V	6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	476	$ 0.63

General part information

The UPA2450CTL is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources