Specification	UPA2450BTL-E1-A

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8 nC
Mounting Type	Surface Mount
Package / Case	6-VFDFN Exposed Pad
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	6-HWSON
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

UPA2450 Series

N-Channel Mos Field Effect Transistor For Switching

Part	Package / Case	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation UPA2450BTL-E1-A	6-VFDFN Exposed Pad	2 N-Channel (Dual)	Logic Level Gate	20 V	17.5 mOhm	Surface Mount	6-HWSON	700 mW	1.5 V	8 nC	MOSFET (Metal Oxide)	8.6 A
Renesas Electronics Corporation UPA2450CTL-E1-A	6-VFDFN Exposed Pad	2 N-Channel (Dual)	Logic Level Gate	20 V	17.5 mOhm	Surface Mount	6-HWSON	700 mW	1.5 V	6 nC	MOSFET (Metal Oxide)	8.6 A	564 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The UPA2450CTL is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources