N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Vgs(th) (Max) @ Id | Configuration | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Technology | Power - Max [Max] | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 1.5 V | 2 N-Channel (Dual) | 6-VFDFN Exposed Pad | 6-HWSON | 17.5 mOhm | 8.6 A | Surface Mount | MOSFET (Metal Oxide) | 700 mW | Logic Level Gate | 564 pF | 20 V | 6 nC |