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D²PAK
Discrete Semiconductor Products

STB35N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.085 OHM, 27 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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DocumentsDS6068+17
D²PAK
Discrete Semiconductor Products

STB35N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.085 OHM, 27 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDS6068+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB35N65M5
Current - Continuous Drain (Id) @ 25°C27 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs83 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3750 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Rds On (Max) @ Id, Vgs98 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.80
10$ 5.83
100$ 4.86
500$ 4.29
Digi-Reel® 1$ 6.80
10$ 5.83
100$ 4.86
500$ 4.29
N/A 0$ 7.88
Tape & Reel (TR) 1000$ 3.54

Description

General part information

STB35 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.