STB35 Series

N-channel 650 V, 0.085 Ohm, 27 A MDmesh M5 Power MOSFET in D2PAK package

Catalog

N-channel 650 V, 0.085 Ohm, 27 A MDmesh M5 Power MOSFET in D2PAK package

Part	Operating Temperature	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
STMicroelectronics STB35N65M5	150 °C	98 mOhm	MOSFET (Metal Oxide)	83 nC	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	27 A	N-Channel	5 V	Surface Mount	650 V	D2PAK	10 V	3750 pF
STMicroelectronics STB35N65DM2		110 mOhm	MOSFET (Metal Oxide)	54 nC	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	28 A	N-Channel	5 V	Surface Mount	650 V	D2PAK	10 V		150 °C	-55 °C	2400 pF	210 W

Catalog

N-channel 650 V, 0.085 Ohm, 27 A MDmesh M5 Power MOSFET in D2PAK package

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.