Discrete Semiconductor Products

GE12160CEA3

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SIC 2N-CH 1200V 1.425KA MODUL

Discrete Semiconductor Products

Active

SIC 2N-CH 1200V 1.425KA MODUL

Technical Specifications

Parameters and characteristics for this part

Specification	GE12160CEA3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Tc)	1.425 kA
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	3744 nC
Input Capacitance (Ciss) (Max)	90000 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C, 150 °C
Operating Temperature (Min)	-55 °C, -55 °C
Package / Case	Module
Package Name	Module
Power - Max	3.75 kW
Power - Max (Tc)	3.75 kW
Qualification	AEC-Q101
Rds On (Max)	1.5 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	4.5 V

Part	Technology	Drain to Source Voltage (Vdss)	Channel Count	Configuration - Features	Configuration	Power - Max	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Vgs(th) (Max)	Rds On (Max)	Package Name	Qualification	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max)	Power - Max (Tc)
GE Aerospace GE12160CEA3	Silicon Carbide (SiC)	1200 V	2	Half Bridge	N-Channel	3.75 kW	1.425 kA	-55 °C -55 °C	150 °C 175 °C	3744 nC	4.5 V	1.5 mOhm	Module	AEC-Q101	Module	Chassis Mount	90000 pF	3.75 kW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	1	$ 8799.00	<4d

3D models and CAD resources for this part

General part information

Mosfet Array 1200V (1.2kV) 1.425kA (Tc) 3.75kW (Tc) Chassis Mount Module

Technical documentation and resources