GE12160 Series
Manufacturer: GE Aerospace
Beta
⌘K
SIC 2N-CH 1200V 1.425KA MODUL
| Part | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Package / Case | Qualification | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Configuration | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GE Aerospace | 3.75 kW | -55 °C -55 °C | 150 °C 175 °C | 90000 pF | Chassis Mount | Module | AEC-Q101 | Module | 1.5 mOhm | 4.5 V | 3744 nC | 1.425 kA | 2 N-Channel | 1.2 kV | 1200 V | Silicon Carbide (SiC) |