GE12160 Series
Manufacturer: GE Aerospace
SIC 2N-CH 1200V 1.425KA MODUL
| Part | Technology | Drain to Source Voltage (Vdss) | Channel Count | Configuration - Features | Configuration | Power - Max | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Vgs(th) (Max) | Rds On (Max) | Package Name | Qualification | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) | Power - Max (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GE Aerospace | Silicon Carbide (SiC) | 1200 V | 2 | Half Bridge | N-Channel | 3.75 kW | 1.425 kA | -55 °C -55 °C | 150 °C 175 °C | 3744 nC | 4.5 V | 1.5 mOhm | Module | AEC-Q101 | Module | Chassis Mount | 90000 pF | 3.75 kW |