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Discrete Semiconductor Products
SQJ912AEP-T2_GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET 2N-CH 40V 30A PPAK SO8
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Discrete Semiconductor Products
SQJ912AEP-T2_GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET 2N-CH 40V 30A PPAK SO8
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SQJ912AEP-T2_GE3 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1835 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® SO-8 Dual |
| Power - Max | 48 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 9.3 mOhm |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SQJ912 Series
Mosfet Array 40V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8 Dual
Documents
Technical documentation and resources