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Discrete Semiconductor Products

SQJ912AEP-T2_BE3

Obsolete

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Discrete Semiconductor Products

SQJ912AEP-T2_BE3

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ912AEP-T2_BE3
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs [Max]38 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1835 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8 Dual
Power - Max48 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs9.3 mOhm
Supplier Device PackagePowerPAK® SO-8 Dual
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SQJ912 Series

Mosfet Array 40V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8 Dual

Documents

Technical documentation and resources

No documents available