SQJ912 Series

Catalog

MOSFET 2N-CH 40V 30A PPAK SO8

Part	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Configuration	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power - Max	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SQJ912AEP-T2_BE3	Surface Mount	40 V	MOSFET (Metal Oxide)	38 nC	30 A	PowerPAK® SO-8 Dual	2 N-Channel (Dual)	Automotive	-55 °C	175 ░C	2.5 V	9.3 mOhm	48 W	AEC-Q101	1835 pF	PowerPAK® SO-8 Dual
Vishay General Semiconductor - Diodes Division SQJ912DEP-T1_GE3	Surface Mount	40 V	MOSFET (Metal Oxide)		30 A	PowerPAK® SO-8 Dual	2 N-Channel (Dual)	Automotive	-55 °C	175 ░C	2.5 V			AEC-Q101		PowerPAK® SO-8 Dual	27 W	7.3 mOhm
Vishay General Semiconductor - Diodes Division SQJ912AEP-T2_GE3	Surface Mount	40 V	MOSFET (Metal Oxide)	38 nC	30 A	PowerPAK® SO-8 Dual	2 N-Channel (Dual)	Automotive	-55 °C	175 ░C	2.5 V	9.3 mOhm	48 W	AEC-Q101	1835 pF	PowerPAK® SO-8 Dual