Discrete Semiconductor Products
STW26NM50
NRNDSTMicroelectronics
MOSFET TRANSISTOR, N CHANNEL, 30 A, 500 V, 120 MOHM, 10 V, 4 V ROHS COMPLIANT: NO
Discrete Semiconductor Products
STW26NM50
NRNDSTMicroelectronics
MOSFET TRANSISTOR, N CHANNEL, 30 A, 500 V, 120 MOHM, 10 V, 4 V ROHS COMPLIANT: NO
Technical Specifications
Parameters and characteristics for this part
| Specification | STW26NM50 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 106 nC |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 313 W |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW26NM50 Series
MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.
Documents
Technical documentation and resources