STW26NM50 Series

N-channel 500 V, 100 mOhm typ., 26 A MDmesh Power MOSFET in a TO-247 package

Catalog

N-channel 500 V, 100 mOhm typ., 26 A MDmesh Power MOSFET in a TO-247 package

Part	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW26NM50	MOSFET (Metal Oxide)	30 V	10 V	500 V	N-Channel	TO-247-3	313 W	Through Hole	5 V	150 °C	30 A	120 mOhm	TO-247-3	106 nC

Catalog

N-channel 500 V, 100 mOhm typ., 26 A MDmesh Power MOSFET in a TO-247 package

Description

MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.