Discrete Semiconductor Products

BUK7E4R0-80E,127

Obsolete

NXP USA Inc.

MOSFET N-CH 80V 120A I2PAK

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

BUK7E4R0-80E,127

Obsolete

NXP USA Inc.

MOSFET N-CH 80V 120A I2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7E4R0-80E,127

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	169 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	12030 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	I2PAK
Power Dissipation (Max)	349 W
Qualification	AEC-Q101
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

BUK7 Series

Part	Vgs(th) (Max)	Technology	Rds On (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	FET Type	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Package / Case
NXP USA Inc. BUK7Y41-80E/GFX
NXP USA Inc. BUK7Y25-80E/GFX	4 V	MOSFET (Metal Oxide)	25 mOhm	20 V	10 V	LFPAK56 Power-SO8	N-Channel	39 A	25.9 nC	80 V	Automotive	1800 pF	95 W	Surface Mount	-55 °C	175 °C	AEC-Q101	SC-100 SOT-669
NXP USA Inc. BUK7E07-55B,127	4 V	MOSFET (Metal Oxide)	7.1 mOhm	20 V	10 V	I2PAK	N-Channel	75 A	53 nC	55 V	Automotive	3760 pF	203 W	Through Hole	-55 °C	175 °C	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA
NXP USA Inc. BUK7E04-40A,127
NXP USA Inc. BUK7Y25-80E/CX	4 V	MOSFET (Metal Oxide)	25 mOhm	20 V	10 V	LFPAK56 Power-SO8	N-Channel	39 A	25.9 nC	80 V	Automotive	1800 pF	95 W	Surface Mount	-55 °C	175 °C	AEC-Q101	SC-100 SOT-669
NXP USA Inc. BUK7E4R3-75C,127	4 V	MOSFET (Metal Oxide)	4.3 mOhm	20 V	10 V	I2PAK	N-Channel	100 A	142 nC	75 V	Automotive	11659 pF	333 W	Through Hole	-55 °C	175 °C	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA
NXP USA Inc. BUK7E1R6-30E,127	4 V	MOSFET (Metal Oxide)	1.6 mOhm	20 V	10 V	I2PAK	N-Channel	120 A	154 nC	30 V	Automotive	11960 pF	349 W	Through Hole	-55 °C	175 °C	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA
NXP USA Inc. BUK7E2R7-30B,127	4 V	MOSFET (Metal Oxide)	2.7 mOhm	20 V	10 V	I2PAK	N-Channel	75 A	91 nC	30 V	Automotive	6212 pF	300 W	Through Hole	-55 °C	175 °C	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA
NXP USA Inc. BUK7Y54-75B,115	4 V	MOSFET (Metal Oxide)	54 mOhm	20 V	10 V	LFPAK56 Power-SO8	N-Channel	21.4 A	12 nC	75 V	Automotive	803 pF	59 W	Surface Mount	-55 °C	175 °C	AEC-Q101	SC-100 SOT-669
NXP USA Inc. BUK7E4R0-80E,127	4 V	MOSFET (Metal Oxide)	4 mOhm	20 V	10 V	I2PAK	N-Channel	120 A	169 nC	80 V	Automotive	12030 pF	349 W	Through Hole	-55 °C	175 °C	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
		296	$ 2.69

CAD

3D models and CAD resources for this part

Description

General part information

BUK7 Series

N-Channel 80 V 120A (Tc) 349W (Tc) Through Hole I2PAK

Documents

Technical documentation and resources