BUK7 Series

Manufacturer: Freescale Semiconductor - NXP

Catalog

TRANS N-CH LFPAK

Part	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP BUK7Y41-80E/GFX
Freescale Semiconductor - NXP BUK7Y25-80E/GFX	MOSFET (Metal Oxide)	25 mOhm	25.9 nC	39 A	-55 °C	175 ░C	SC-100 SOT-669	10 V	95 W	20 V	1800 pF	N-Channel	LFPAK56 Power-SO8	Surface Mount	80 V
Freescale Semiconductor - NXP BUK7E07-55B,127	MOSFET (Metal Oxide)	7.1 mOhm	53 nC	75 A	-55 °C	175 ░C	I2PAK TO-262-3 Long Leads TO-262AA	10 V	203 W	20 V	3760 pF	N-Channel	I2PAK	Through Hole	55 V
Freescale Semiconductor - NXP BUK7E04-40A,127
Freescale Semiconductor - NXP BUK7Y25-80E/CX	MOSFET (Metal Oxide)	25 mOhm	25.9 nC	39 A	-55 °C	175 ░C	SC-100 SOT-669	10 V	95 W	20 V	1800 pF	N-Channel	LFPAK56 Power-SO8	Surface Mount	80 V
Freescale Semiconductor - NXP BUK7E4R3-75C,127	MOSFET (Metal Oxide)		142 nC	100 A	-55 °C	175 ░C	I2PAK TO-262-3 Long Leads TO-262AA	10 V		20 V	11659 pF	N-Channel	I2PAK	Through Hole	75 V	333 W
Freescale Semiconductor - NXP BUK7E1R6-30E,127	MOSFET (Metal Oxide)	1.6 mOhm	154 nC	120 A	-55 °C	175 ░C	I2PAK TO-262-3 Long Leads TO-262AA	10 V	349 W	20 V	11960 pF	N-Channel	I2PAK	Through Hole	30 V
Freescale Semiconductor - NXP BUK7E2R7-30B,127	MOSFET (Metal Oxide)	2.7 mOhm		75 A	-55 °C	175 ░C	I2PAK TO-262-3 Long Leads TO-262AA	10 V	300 W	20 V	6212 pF	N-Channel	I2PAK	Through Hole	30 V		91 nC
Freescale Semiconductor - NXP BUK7Y54-75B,115	MOSFET (Metal Oxide)	54 mOhm		21.4 A	-55 °C	175 ░C	SC-100 SOT-669	10 V		20 V	803 pF	N-Channel	LFPAK56 Power-SO8	Surface Mount	75 V	59 W		12 nC
Freescale Semiconductor - NXP BUK7Y25-60E/GFX