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Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
3D models and CAD resources for this part
General part information
Bipolar (BJT) Transistor
Technical documentation and resources
No documents available
| Part | Vgs(th) (Max) | Technology | Rds On (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package Name | FET Type | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Grade | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Qualification | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. | ||||||||||||||||||
 NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 25 mOhm | 20 V | 10 V | LFPAK56 Power-SO8 | N-Channel | 39 A | 25.9 nC | 80 V | Automotive | 1800 pF | 95 W | Surface Mount | -55 °C | 175 °C | AEC-Q101 | SC-100 SOT-669 |
 NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 7.1 mOhm | 20 V | 10 V | I2PAK | N-Channel | 75 A | 53 nC | 55 V | Automotive | 3760 pF | 203 W | Through Hole | -55 °C | 175 °C | AEC-Q101 | I2PAK TO-262-3 Long Leads TO-262AA |
NXP USA Inc. | ||||||||||||||||||
NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 25 mOhm | 20 V | 10 V | LFPAK56 Power-SO8 | N-Channel | 39 A | 25.9 nC | 80 V | Automotive | 1800 pF | 95 W | Surface Mount | -55 °C | 175 °C | AEC-Q101 | SC-100 SOT-669 |
NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 4.3 mOhm | 20 V | 10 V | I2PAK | N-Channel | 100 A | 142 nC | 75 V | Automotive | 11659 pF | 333 W | Through Hole | -55 °C | 175 °C | AEC-Q101 | I2PAK TO-262-3 Long Leads TO-262AA |
NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 1.6 mOhm | 20 V | 10 V | I2PAK | N-Channel | 120 A | 154 nC | 30 V | Automotive | 11960 pF | 349 W | Through Hole | -55 °C | 175 °C | AEC-Q101 | I2PAK TO-262-3 Long Leads TO-262AA |
NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 2.7 mOhm | 20 V | 10 V | I2PAK | N-Channel | 75 A | 91 nC | 30 V | Automotive | 6212 pF | 300 W | Through Hole | -55 °C | 175 °C | AEC-Q101 | I2PAK TO-262-3 Long Leads TO-262AA |
NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 54 mOhm | 20 V | 10 V | LFPAK56 Power-SO8 | N-Channel | 21.4 A | 12 nC | 75 V | Automotive | 803 pF | 59 W | Surface Mount | -55 °C | 175 °C | AEC-Q101 | SC-100 SOT-669 |
NXP USA Inc. | 4 V | MOSFET (Metal Oxide) | 4 mOhm | 20 V | 10 V | I2PAK | N-Channel | 120 A | 169 nC | 80 V | Automotive | 12030 pF | 349 W | Through Hole | -55 °C | 175 °C | AEC-Q101 | I2PAK TO-262-3 Long Leads TO-262AA |