Discrete Semiconductor Products

STL19N60M2

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TRANSISTOR MOSFET N-CH 600V 11A 5-PIN POWERFLAT T/R

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Discrete Semiconductor Products

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TRANSISTOR MOSFET N-CH 600V 11A 5-PIN POWERFLAT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	STL19N60M2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	791 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN, 4-PowerVDFN
Power Dissipation (Max)	90 W
Supplier Device Package	PowerFlat™ (8x8) HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STL19N60DM2	4-PowerVDFN 8-PowerVDFN	320 mOhm	10 V	11 A	5 V	N-Channel	90 W	Surface Mount	25 V	PowerFlat™ (8x8) HV	150 °C	-55 °C	MOSFET (Metal Oxide)	21 nC	600 V
STMicroelectronics STL19N60M2	4-PowerVDFN 8-PowerVDFN		10 V	11 A	4 V	N-Channel	90 W	Surface Mount	25 V	PowerFlat™ (8x8) HV	150 °C	-55 °C	MOSFET (Metal Oxide)	21.5 nC	600 V	791 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Extremely low gate charge

Excellent output capacitance (COSS) profile

100% avalanche tested

Technical documentation and resources