Discrete Semiconductor Products

STL19N60DM2

Obsolete

MOSFET N-CH 600V 11A PWRFLAT HV

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 11A PWRFLAT HV

Technical Specifications

Parameters and characteristics for this part

Specification	STL19N60DM2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN, 4-PowerVDFN
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	PowerFlat™ (8x8) HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STL19N60DM2	4-PowerVDFN 8-PowerVDFN	320 mOhm	10 V	11 A	5 V	N-Channel	90 W	Surface Mount	25 V	PowerFlat™ (8x8) HV	150 °C	-55 °C	MOSFET (Metal Oxide)	21 nC	600 V
STMicroelectronics STL19N60M2	4-PowerVDFN 8-PowerVDFN		10 V	11 A	4 V	N-Channel	90 W	Surface Mount	25 V	PowerFlat™ (8x8) HV	150 °C	-55 °C	MOSFET (Metal Oxide)	21.5 nC	600 V	791 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV

Technical documentation and resources