Zenode.ai Logo
Beta
D2Pak
Discrete Semiconductor Products

STGB15H60DF

Active
STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 15 A HIGH SPEED

Deep-Dive with AI

Search across all available documentation for this part.

D2Pak
Discrete Semiconductor Products

STGB15H60DF

Active
STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 15 A HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB15H60DF
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Pulsed (Icm)60 A
Gate Charge81 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]115 W
Reverse Recovery Time (trr)103 ns
Supplier Device PackageTO-263 (D2PAK)
Switching Energy207 µJ, 136 µJ
Td (on/off) @ 25°C24.5 ns, 118 ns
Test Condition400 V, 15 V, 10 Ohm, 15 A
Vce(on) (Max) @ Vge, Ic [Max]2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.34
10$ 1.94
100$ 1.54
500$ 1.31
Digi-Reel® 1$ 2.34
10$ 1.94
100$ 1.54
500$ 1.31
N/A 155$ 3.15
Tape & Reel (TR) 1000$ 1.09
2000$ 1.03
5000$ 0.99
10000$ 0.96
MouserN/A 1$ 1.88
10$ 1.56
100$ 1.41
500$ 1.23
1000$ 0.91
2000$ 0.82
NewarkEach (Supplied on Cut Tape) 1$ 1.67
10$ 1.61
25$ 1.59
50$ 1.56
100$ 1.54
250$ 1.36
500$ 1.35
1000$ 1.35

Description

General part information

STGB15 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.