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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3763 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 hFE |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | TO-39 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 900 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 26.92 | |
| Microchip Direct | N/A | 1 | $ 28.99 | |
| Newark | Each | 100 | $ 26.92 | |
| 500 | $ 25.89 | |||
Description
General part information
2N3763L-Transistor Series
This specification covers the performance requirements for PNP silicon switching 2N3762, 2N3763, 2N3764 and 2N3765 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/396 and two levels of product assurance (JANHC/JANHCA and JANKC/JANKCA) are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: (2N3762L and 2N3763L) (TO-5), (2N3762 and 2N3763) (TO-39), 2N3764 and 2N3765 (TO-46) , surface mount (U4) and (UA) The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/396.
Documents
Technical documentation and resources
