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2N1893
Discrete Semiconductor Products

2N3763L

Active
Microchip Technology

PNP SILICON SWITCHING -40V TO -60V, -1.5A

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2N1893
Discrete Semiconductor Products

2N3763L

Active
Microchip Technology

PNP SILICON SWITCHING -40V TO -60V, -1.5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3763L
Current - Collector (Ic) (Max) [Max]1.5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-205AA, TO-5-3 Metal Can
Power - Max [Max]500 mW
Supplier Device PackageTO-5AA
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic900 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 28.15
Microchip DirectN/A 1$ 30.31
NewarkEach 100$ 28.15
500$ 27.06

Description

General part information

2N3763L-Transistor Series

This specification covers the performance requirements for PNP silicon switching 2N3762, 2N3763, 2N3764 and 2N3765 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/396 and two levels of product assurance (JANHC/JANHCA and JANKC/JANKCA) are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: (2N3762L and 2N3763L) (TO-5), (2N3762 and 2N3763) (TO-39), 2N3764 and 2N3765 (TO-46) , surface mount (U4) and (UA) The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/396.

Documents

Technical documentation and resources