ADRF5301BCCZN-R7
ActiveRF SWITCH, 37 GHZ TO 49 GHZ, LGA-20, 3.15 V TO 3.45 V, -40 °C TO 105 °C
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ADRF5301BCCZN-R7
ActiveRF SWITCH, 37 GHZ TO 49 GHZ, LGA-20, 3.15 V TO 3.45 V, -40 °C TO 105 °C
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Technical Specifications
Parameters and characteristics for this part
| Specification | ADRF5301BCCZN-R7 |
|---|---|
| Circuit | SPDT |
| Features | DC Blocked |
| Frequency Range [Max] | 49 GHz |
| Frequency Range [Min] | 37 GHz |
| IIP3 | 52 dBm |
| Impedance | 50 Ohms |
| Insertion Loss | 1.4 dB |
| Isolation | 30 dB |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 ░C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 20-VFLGA Exposed Pad |
| RF Type | VSAT, Cellular, 5G |
| Supplier Device Package | 20-LGA (3x3) |
| Topology | Reflective |
| Voltage - Supply [Max] | 3.45 V |
| Voltage - Supply [Min] | 3.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ADRF5301 Series
The ADRF5301 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5301 was developed for 5G applications from 37 GHz to 49 GHz. This device has a low insertion loss of 1.4 dB, high isolation of 30 dB, and RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5301 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V applied to the VDD pin. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible control.The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array package and can operate from −40°C to +105°C.ApplicationsIndustrial scannerTest instrumentationCellular infrastructure mmWave 5GMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)
