Discrete Semiconductor Products

MSCDC50H1201AG

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1200V, 50A, SP1F FULL BRIDGE MSIC™ DIODE MODULE

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Discrete Semiconductor Products

Active

1200V, 50A, SP1F FULL BRIDGE MSIC™ DIODE MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	MSCDC50H1201AG

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	200 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Technology	Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V
Voltage - Peak Reverse (Max) [Max]	1.2 kV

1700V, 50A, SP1F Three Phase Bridge mSiC™ Diode Module

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Diode Type	Package / Case	Voltage - Peak Reverse (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology MSCDC50H701AG	50 A	1.8 V	Chassis Mount	Single Phase	Module	700 V	200 µA	Silicon Carbide Schottky	-40 C	175 °C
Microchip Technology MSCDC50X701AG	50 A	1.8 V	Chassis Mount	Three Phase	Module	700 V	200 µA	Silicon Carbide Schottky	-40 C	175 °C
Microchip Technology MSCDC50X1701AG	50 A	1.8 V	Chassis Mount	Three Phase	Module	1.7 kV	200 µA	Silicon Carbide Schottky	-40 C	175 °C
Microchip Technology MSCDC50H1201AG	50 A	1.8 V	Chassis Mount	Single Phase	Module	1.2 kV	200 µA	Silicon Carbide Schottky	-40 C	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* SiC Schottky Diode

* Zero reverse recovery

* Zero forward recovery

Technical documentation and resources